IRFR540ZTRPBF vs IRFB3207ZPBF Vergleich
Detaillierter Direktvergleich von IRFR540ZTRPBF von Infineon und IRFB3207ZPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR540ZTRPBF | IRFB3207ZPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $1,62 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 35 A (at Tc) | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) Max | 28.5 mOhm at Vgs=10V | — |
| Gate-Source Threshold Vgs(th) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | 39 nC | — |
| Power Dissipation (Pd) | 91 W (at Tc) | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction) | — |
| Gehäuse | TO-252AA (DPAK) surface mount | TO-220AB (3-lead through-hole) |
| Technology | IR MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Montageart | Surface Mount | Through Hole |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| MSL-Level | 1 (unlimited floor life at <30 C / 85% RH) | N/A (through-hole) |
| RoHS-Status | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |