IRFR540ZTRPBF vs IRFB3207ZPBF Comparação
Comparação detalhada lado a lado de IRFR540ZTRPBF por Infineon e IRFB3207ZPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRFR540ZTRPBF | IRFB3207ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,32 | $1,62 |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 35 A (at Tc) | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) Max | 28.5 mOhm at Vgs=10V | — |
| Gate-Source Threshold Vgs(th) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | 39 nC | — |
| Power Dissipation (Pd) | 91 W (at Tc) | — |
| Faixa de temperatura de operação | -55 C to +175 C (junction) | — |
| Encapsulamento | TO-252AA (DPAK) surface mount | TO-220AB (3-lead through-hole) |
| Technology | IR MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Tipo de montagem | Surface Mount | Through Hole |
| Contagem de pinos | 3 (Gate, Drain, Source) | — |
| Nível MSL | 1 (unlimited floor life at <30 C / 85% RH) | N/A (through-hole) |
| Status RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Temperatura de junção de operação | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |