IRFR540ZTRPBF vs IRFB3207ZPBF 对比
详细并排对比 IRFR540ZTRPBF 出自 Infineon 和 IRFB3207ZPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR540ZTRPBF | IRFB3207ZPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.32 | $1.62 |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 35 A (at Tc) | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) Max | 28.5 mOhm at Vgs=10V | — |
| Gate-Source Threshold Vgs(th) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | 39 nC | — |
| Power Dissipation (Pd) | 91 W (at Tc) | — |
| 工作温度范围 | -55 C to +175 C (junction) | — |
| 封装 | TO-252AA (DPAK) surface mount | TO-220AB (3-lead through-hole) |
| Technology | IR MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| 安装类型 | Surface Mount | Through Hole |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| MSL 等级 | 1 (unlimited floor life at <30 C / 85% RH) | N/A (through-hole) |
| RoHS 状态 | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| 工作结温 | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |