IRFR540ZTRPBF vs IRFB3207ZPBF 비교
다음의 상세 나란히 비교: IRFR540ZTRPBF 제조: Infineon 및 IRFB3207ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR540ZTRPBF | IRFB3207ZPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.32 | $1.62 |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 35 A (at Tc) | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) Max | 28.5 mOhm at Vgs=10V | — |
| Gate-Source Threshold Vgs(th) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | 39 nC | — |
| Power Dissipation (Pd) | 91 W (at Tc) | — |
| 동작 온도 범위 | -55 C to +175 C (junction) | — |
| 패키지 | TO-252AA (DPAK) surface mount | TO-220AB (3-lead through-hole) |
| Technology | IR MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| 실장 유형 | Surface Mount | Through Hole |
| 핀 수 | 3 (Gate, Drain, Source) | — |
| MSL 레벨 | 1 (unlimited floor life at <30 C / 85% RH) | N/A (through-hole) |
| RoHS 상태 | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| 동작 접합 온도 | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |