IRFR540ZTRPBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRFR540ZTRPBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR540ZTRPBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $1.62 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) | 35 A (at Tc) | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance Rds(on) Max | 28.5 mOhm at Vgs=10V | β |
| Gate-Source Threshold Vgs(th) | [DATA_NEEDED: Vgs(th) typical value] | β |
| Total Gate Charge (Qg) | 39 nC | β |
| Power Dissipation (Pd) | 91 W (at Tc) | β |
| Operating Temperature Range | -55 C to +175 C (junction) | β |
| Package | TO-252AA (DPAK) surface mount | TO-220AB (3-lead through-hole) |
| Technology | IR MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Mounting Type | Surface Mount | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | β |
| MSL Level | 1 (unlimited floor life at <30 C / 85% RH) | N/A (through-hole) |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Automotive Qualified | Yes (AEC-Q101) | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |