IRFS3006TRLPBF vs IRFS3107TRLPBF Vergleich
Detaillierter Direktvergleich von IRFS3006TRLPBF von Infineon und IRFS3107TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFS3006TRLPBF | IRFS3107TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,40 | $1,75 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | IR HEXFET (Planar DMOS) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (Vds) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 195 A | — |
| Pulsed Drain Current (Idm) | 270 A | — |
| On-Resistance Rds(on) max at Vgs=10V | 2.5 mOhm | — |
| Gate-Source Threshold Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 200 nC | 160 nC |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | — |
| Power Dissipation (Pd) at Tc=25C | 375 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| Gehäuse | D2PAK (TO-263AB), surface mount | D2PAK (TO-263AB), 3-pin |
| Montageart | Surface Mount | Surface Mount (Gull Wing) |
| RoHS Compliance | Lead-Free (Pb-Free), RoHS Compliant | — |
| MSL-Level | 1 | — |
| Avalanche Energy Rating | Avalanche rated (per Infineon datasheet) | — |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) | — | 195 A at Tc |
| Continuous Drain Current (ID max) | — | 230 A |
| Power Dissipation (PD) | — | 370 W at Tc |
| RDS(on) Max | — | 3 mOhm |
| Avalanche Energy (EAS) | — | 300 mJ |
| Drive Voltage (Max RDS(on)) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | — | Compliant (PBF / lead-free) |