IRFS3006TRLPBF vs IRFS3107TRLPBF 비교
다음의 상세 나란히 비교: IRFS3006TRLPBF 제조: Infineon 및 IRFS3107TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFS3006TRLPBF | IRFS3107TRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.40 | $1.75 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Technology | IR HEXFET (Planar DMOS) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (Vds) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 195 A | — |
| Pulsed Drain Current (Idm) | 270 A | — |
| On-Resistance Rds(on) max at Vgs=10V | 2.5 mOhm | — |
| Gate-Source Threshold Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 200 nC | 160 nC |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | — |
| Power Dissipation (Pd) at Tc=25C | 375 W | — |
| 동작 접합 온도 | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | — |
| 패키지 | D2PAK (TO-263AB), surface mount | D2PAK (TO-263AB), 3-pin |
| 실장 유형 | Surface Mount | Surface Mount (Gull Wing) |
| RoHS Compliance | Lead-Free (Pb-Free), RoHS Compliant | — |
| MSL 레벨 | 1 | — |
| Avalanche Energy Rating | Avalanche rated (per Infineon datasheet) | — |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) | — | 195 A at Tc |
| Continuous Drain Current (ID max) | — | 230 A |
| Power Dissipation (PD) | — | 370 W at Tc |
| RDS(on) Max | — | 3 mOhm |
| Avalanche Energy (EAS) | — | 300 mJ |
| Drive Voltage (Max RDS(on)) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| 동작 온도 | — | [DATA_NEEDED: operating temperature range] |
| RoHS 상태 | — | Compliant (PBF / lead-free) |