IRFS3006TRLPBF vs IRFS3107TRLPBF 对比

详细并排对比 IRFS3006TRLPBF 出自 Infineon 和 IRFS3107TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFS3006TRLPBF IRFS3006TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRFS3006TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRFS3006TRLPBF ✓ 量产中
Infineon
IRFS3107TRLPBF IRFS3107TRLPBF - 75V 230A N-Channel MOSFET, 3mOhm | Infineon

IRFS3107TRLPBF - 75V 230A N-Channel MOSFET, 3mOhm | Infineon

IRFS3107TRLPBF ✓ 量产中

规格对比

参数 IRFS3006TRLPBF IRFS3107TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.40 $1.75
FET Type N-Channel N-Channel, Enhancement Mode
Technology IR HEXFET (Planar DMOS) IR MOSFET (HEXFET)
Drain-Source Voltage (Vds) 60 V —
Continuous Drain Current (Id) at Tc=25C 195 A —
Pulsed Drain Current (Idm) 270 A —
On-Resistance Rds(on) max at Vgs=10V 2.5 mOhm —
Gate-Source Threshold Vgs(th) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 200 nC 160 nC
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] —
Power Dissipation (Pd) at Tc=25C 375 W —
工作结温 -55 C to +175 C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
封装 D2PAK (TO-263AB), surface mount D2PAK (TO-263AB), 3-pin
安装类型 Surface Mount Surface Mount (Gull Wing)
RoHS Compliance Lead-Free (Pb-Free), RoHS Compliant —
MSL 等级 1 —
Avalanche Energy Rating Avalanche rated (per Infineon datasheet) —
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) — 195 A at Tc
Continuous Drain Current (ID max) — 230 A
Power Dissipation (PD) — 370 W at Tc
RDS(on) Max — 3 mOhm
Avalanche Energy (EAS) — 300 mJ
Drive Voltage (Max RDS(on)) — 10 V
Configuration — Single with built-in body diode
工作温度 — [DATA_NEEDED: operating temperature range]
RoHS 状态 — Compliant (PBF / lead-free)

数据手册与资源

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