IRFS3006TRLPBF vs IRFS3107TRLPBF Comparison

Detailed side-by-side comparison of IRFS3006TRLPBF by Infineon and IRFS3107TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFS3006TRLPBF IRFS3107TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel, Enhancement Mode
Technology IR HEXFET (Planar DMOS) IR MOSFET (HEXFET)
Drain-Source Voltage (Vds) 60 V —
Continuous Drain Current (Id) at Tc=25C 195 A —
Pulsed Drain Current (Idm) 270 A —
On-Resistance Rds(on) max at Vgs=10V 2.5 mOhm —
Gate-Source Threshold Vgs(th) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 200 nC 160 nC
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] —
Power Dissipation (Pd) at Tc=25C 375 W —
Operating Junction Temperature -55 C to +175 C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Package D2PAK (TO-263AB), surface mount D2PAK (TO-263AB), 3-pin
Mounting Type Surface Mount Surface Mount (Gull Wing)
RoHS Compliance Lead-Free (Pb-Free), RoHS Compliant —
MSL Level 1 —
Avalanche Energy Rating Avalanche rated (per Infineon datasheet) —
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) — 195 A at Tc
Continuous Drain Current (ID max) — 230 A
Power Dissipation (PD) — 370 W at Tc
RDS(on) Max — 3 mOhm
Avalanche Energy (EAS) — 300 mJ
Drive Voltage (Max RDS(on)) — 10 V
Configuration — Single with built-in body diode
Operating Temperature — [DATA_NEEDED: operating temperature range]
RoHS Status — Compliant (PBF / lead-free)

Datasheets & Resources

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