IRFZ48NPBF vs IRFB7545PBF Vergleich

Detaillierter Direktvergleich von IRFZ48NPBF von Infineon und IRFB7545PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFZ48NPBF IRFB7545PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,65 $0,95
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 380 A
Gate-to-Source Voltage (VGS) ±20 V —
On-Resistance (RDS(on)) at VGS=10V 14 mΩ (maximum) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 54 nC —
Power Dissipation (PD) at TC 130 W —
Betriebs-Sperrschichttemperatur -55C to +175C -55C to +175C
Gehäuse TO-220AB (through-hole) TO-220AB (Through-Hole)
Montageart Through Hole Through Hole (THT)
Technology HEXFET (advanced planar) StrongIRFET™ (HEXFET, N-Channel)
Lead-Free (PBF suffix) Yes —
RoHS-Status Compliant —
Qualification Standard Industrial market —
Manufacturer — Infineon Technologies
Part Number — IRFB7545PBF
Polarity — N-Channel
VDS (Drain-Source Voltage) max — 60 V
VGS (Gate-Source Voltage) max — ±20 V
RDS(on) max at VGS=10V — 5.9 mOhm
Continuous Drain Current (ID) at Tc=25C — 95 A
Single-Pulse Avalanche Current (IAS) — 57 A
Power Dissipation (PD) at Tc=25C — 125 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Lead-Free / RoHS — Yes (Lead-Free, PBF suffix)
MSL-Level — N/A (Through-Hole)
Gate Drive Voltage (typical) — 10 V
Avalanche Energy Rated — Yes

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