IRFZ48NPBF vs IRFB7545PBF Comparison
Detailed side-by-side comparison of IRFZ48NPBF by Infineon and IRFB7545PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ48NPBF | IRFB7545PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.95 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC | 64 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 380 A |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΞ© (maximum) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | 54 nC | β |
| Power Dissipation (PD) at TC | 130 W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | TO-220AB (through-hole) | TO-220AB (Through-Hole) |
| Mounting Type | Through Hole | Through Hole (THT) |
| Technology | HEXFET (advanced planar) | StrongIRFETβ’ (HEXFET, N-Channel) |
| Lead-Free (PBF suffix) | Yes | β |
| RoHS Status | Compliant | β |
| Qualification Standard | Industrial market | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IRFB7545PBF |
| Polarity | β | N-Channel |
| VDS (Drain-Source Voltage) max | β | 60 V |
| VGS (Gate-Source Voltage) max | β | Β±20 V |
| RDS(on) max at VGS=10V | β | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | β | 95 A |
| Single-Pulse Avalanche Current (IAS) | β | 57 A |
| Power Dissipation (PD) at Tc=25C | β | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | 1.0 C/W |
| Lead-Free / RoHS | β | Yes (Lead-Free, PBF suffix) |
| MSL Level | β | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | β | 10 V |
| Avalanche Energy Rated | β | Yes |