IRFZ48NPBF vs IRFB7545PBF 비교
다음의 상세 나란히 비교: IRFZ48NPBF 제조: Infineon 및 IRFB7545PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFZ48NPBF | IRFB7545PBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.65 | $0.95 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 380 A |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | — |
| Power Dissipation (PD) at TC | 130 W | — |
| 동작 접합 온도 | -55C to +175C | -55C to +175C |
| 패키지 | TO-220AB (through-hole) | TO-220AB (Through-Hole) |
| 실장 유형 | Through Hole | Through Hole (THT) |
| Technology | HEXFET (advanced planar) | StrongIRFET™ (HEXFET, N-Channel) |
| Lead-Free (PBF suffix) | Yes | — |
| RoHS 상태 | Compliant | — |
| Qualification Standard | Industrial market | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFB7545PBF |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) max | — | 60 V |
| VGS (Gate-Source Voltage) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | — | 95 A |
| Single-Pulse Avalanche Current (IAS) | — | 57 A |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Lead-Free / RoHS | — | Yes (Lead-Free, PBF suffix) |
| MSL 레벨 | — | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | — | 10 V |
| Avalanche Energy Rated | — | Yes |