ISC025N08NM5LF2ATMA1 vs ISC028N03LF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC025N08NM5LF2ATMA1 sa pamamagitan ng Infineon at ISC028N03LF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 ✓ NakahandaInfineon
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC025N08NM5LF2ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) @ TA=25°C | 23 A | — |
| Continuous Drain Current (ID) @ TC=25°C | 198 A | — |
| On-Resistance (RDS(on)) Max | 2.55 mΩ | — |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V | — |
| Total Gate Charge (Qg) Max | 96 nC | — |
| Power Dissipation @ TA | 3 W | — |
| Power Dissipation @ TC | 217 W | — |
| Packhaging | PG-TDSON-8 FL (Surface Mount) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Polarity | N-Channel | — |
| Tindminan RoHS | Compliant | — |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.35 V |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |