ISC025N08NM5LF2ATMA1 vs ISC028N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISC025N08NM5LF2ATMA1 dari Infineon dan ISC028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC025N08NM5LF2ATMA1 ISC028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS 5 LF2 —
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) @ TA=25°C 23 A —
Continuous Drain Current (ID) @ TC=25°C 198 A —
On-Resistance (RDS(on)) Max 2.55 mΩ —
Gate-Source Threshold (VGS(th)) Max 3.9 V —
Total Gate Charge (Qg) Max 96 nC —
Power Dissipation @ TA 3 W —
Power Dissipation @ TC 217 W —
Paket PG-TDSON-8 FL (Surface Mount) PG-TDSON-8-62 (5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Polarity N-Channel —
Status RoHS Compliant —
Ordering Code Suffix ATMA1 (Tape & Reel, 13-inch) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Suhu Hubung Kerja — -55 C to +175 C
RoHS / Lead-Free — Yes (RoHS compliant)
Level MSL — 1 (per JEDEC J-STD-020)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon