ISC0703NLSATMA1 vs ISC080N10NM6ATMA1 Vergleich

Detaillierter Direktvergleich von ISC0703NLSATMA1 von Infineon und ISC080N10NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC0703NLSATMA1 ISC080N10NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,51 $1,05
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta=25C 13 A —
Continuous Drain Current (ID) at Tc=25C 57 A —
Power Dissipation (PD) at Ta=25C 3 W —
Power Dissipation (PD) at Tc=25C 44 W —
Technology Trench MOSFET (OptiMOS family) —
Gehäuse PG-TDSON-8 (5x6 mm) PG-TDSON-8 FL (TDSON EP)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +150C (junction) -55°C to +175°C (TJ max, per datasheet)
Standard Package Quantity 5,000 (reel) —
MSL-Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020, per datasheet)
RoHS-Status Compliant Compliant
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] 3.3 V at 36 µA
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Avalanche Energy (EAS) [DATA_NEEDED: EAS rating] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 6 100V
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Lead-Free — Yes
Halogenfrei — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

Datenblätter & Ressourcen

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