ISC0703NLSATMA1 vs ISC080N10NM6ATMA1 Comparaison
Comparaison détaillée côte à côte de ISC0703NLSATMA1 par Infineon et ISC080N10NM6ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | ISC0703NLSATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,51 | $1,05 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=25C | 57 A | — |
| Power Dissipation (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 44 W | — |
| Technology | Trench MOSFET (OptiMOS family) | — |
| Boîtier | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 FL (TDSON EP) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +150C (junction) | -55°C to +175°C (TJ max, per datasheet) |
| Standard Package Quantity | 5,000 (reel) | — |
| Niveau MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, per datasheet) |
| Statut RoHS | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | 3.3 V at 36 µA |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 6 100V |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Lead-Free | — | Yes |
| Sans halogène | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |