ISC0703NLSATMA1 vs ISC080N10NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC0703NLSATMA1 disebabkan oleh Infineon dan ISC080N10NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC0703NLSATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta=25C 13 A —
Continuous Drain Current (ID) at Tc=25C 57 A —
Power Dissipation (PD) at Ta=25C 3 W —
Power Dissipation (PD) at Tc=25C 44 W —
Technology Trench MOSFET (OptiMOS family) —
Kemasan PG-TDSON-8 (5x6 mm) PG-TDSON-8 FL (TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55°C to +175°C (TJ max, per datasheet)
Standard Package Quantity 5,000 (reel) —
Aras MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020, per datasheet)
Status RoHS Compliant Compliant
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] 3.3 V at 36 µA
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Avalanche Energy (EAS) [DATA_NEEDED: EAS rating] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 6 100V
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Lead-Free — Yes
Boson Bebas — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

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