ISZ173N15NM6ATMA1 vs ISZ072N06NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISZ173N15NM6ATMA1 von Infineon und ISZ072N06NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISZ173N15NM6ATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 150V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 60 V |
| Continuous Drain Current (ID) at Ta | 7.9 A | — |
| Continuous Drain Current (ID) at Tc | 48 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 94 W | — |
| Technology | OptiMOS 6 trench-gate MOSFET | OptiMOS 6 trench MOSFET |
| Gehäuse | PG-TSDSON-8 FL | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Montageart | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | — |
| Application | Hard and soft switching, high/low frequency | — |
| Lead-Free | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Tape & Reel Quantity | 5000 | — |
| Product Family | — | OptiMOS 6 60V |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25°C) | — | 57 A |
| Continuous Drain Current (ID, Ta) | — | 12.7 A |
| RDS(on) max @ VGS=10V | — | 7.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V (typ) |
| Verlustleistung (TC=25°C) | — | 50 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Betriebstemperaturbereich | — | -55C to +175C ( Tj max 175C ) |
| MSL-Level | — | 1 |