ISZ173N15NM6ATMA1 vs ISZ072N06NM6ATMA1 Comparison

Detailed side-by-side comparison of ISZ173N15NM6ATMA1 by Infineon and ISZ072N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 βœ“ Active
Infineon
ISZ072N06NM6ATMA1

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISZ173N15NM6ATMA1 ISZ072N06NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 150V β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 150 V 60 V
Continuous Drain Current (ID) at Ta 7.9 A β€”
Continuous Drain Current (ID) at Tc 48 A β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 94 W β€”
Technology OptiMOS 6 trench-gate MOSFET OptiMOS 6 trench MOSFET
Package PG-TSDSON-8 FL PG-TSDSON-8-34 (TSDSON-8 FL)
Mounting Type Surface Mount Surface Mount
Operating Mode Enhancement Mode β€”
Application Hard and soft switching, high/low frequency β€”
Lead-Free Yes β€”
RoHS Status Compliant Compliant
Tape & Reel Quantity 5000 β€”
Product Family β€” OptiMOS 6 60V
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID, Tc=25Β°C) β€” 57 A
Continuous Drain Current (ID, Ta) β€” 12.7 A
RDS(on) max @ VGS=10V β€” 7.2 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 3.3 V (typ)
Power Dissipation (Tc=25Β°C) β€” 50 W
Power Dissipation (Ta) β€” 2.5 W
Operating Temperature Range β€” -55C to +175C ( Tj max 175C )
MSL Level β€” 1

Datasheets & Resources

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