ISZ173N15NM6ATMA1 vs ISZ072N06NM6ATMA1 对比

详细并排对比 ISZ173N15NM6ATMA1 出自 Infineon 和 ISZ072N06NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 ✓ 量产中
Infineon
ISZ072N06NM6ATMA1 ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 ✓ 量产中

规格对比

参数 ISZ173N15NM6ATMA1 ISZ072N06NM6ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $0.38
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 150V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V 60 V
Continuous Drain Current (ID) at Ta 7.9 A —
Continuous Drain Current (ID) at Tc 48 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 94 W —
Technology OptiMOS 6 trench-gate MOSFET OptiMOS 6 trench MOSFET
封装 PG-TSDSON-8 FL PG-TSDSON-8-34 (TSDSON-8 FL)
安装类型 Surface Mount Surface Mount
Operating Mode Enhancement Mode —
Application Hard and soft switching, high/low frequency —
Lead-Free Yes —
RoHS 状态 Compliant Compliant
Tape & Reel Quantity 5000 —
Product Family — OptiMOS 6 60V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID, Tc=25°C) — 57 A
Continuous Drain Current (ID, Ta) — 12.7 A
RDS(on) max @ VGS=10V — 7.2 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V (typ)
功耗(TC=25°C) — 50 W
Power Dissipation (Ta) — 2.5 W
工作温度范围 — -55C to +175C ( Tj max 175C )
MSL 等级 — 1

数据手册与资源

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