K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
Teilenummer: K3K8K80BM-JGCT ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.95 | $39,50 |
| 100 | $3.62 | $362,00 |
| 500 | $3.35 | $1.675,00 |
| 1.000 | $3.1 | $3.100,00 |
K3K8K80BM-JGCT Übersicht
Low-power DDR DRAM is a class of volatile memory that transfers data on both edges of the clock to double bandwidth while reducing operating and standby power. Within the memory hierarchy, LPDDR sits below DDR5 server DIMMs in raw bandwidth but dominates mobile and battery-powered systems because of its low core voltage, deep power-down modes, and PoP (Package-on-Package) or discrete BGA mounting options. It is a direct child of the broader SDRAM/DRAM semiconductor category.
Key characteristics of this device class include high-speed bidirectional data transfer, per-bank and per-rank power management, dynamic voltage and frequency scaling, and initialization/training sequences defined by the JEDEC LPDDR specification in force for the die generation. Samsung mass-produces these dies on advanced DRAM process nodes with stacked or planar cell arrays.
Architecturally, Samsung LPDDR components integrate the memory array, sense amplifiers, row/column decoders, DLL/phase-alignment circuitry, and I/O gating on a single die, with the package ball map exposing the CA (command/address) bus and DQ data lanes.
Typical applications include smartphone application-processor memory, tablet and notebook SoC main memory, automotive infotainment memory subsystems, and embedded AI/edge-computing modules that require high bandwidth per watt.
A key design consideration is signal integrity: LPDDR CA/DQ routing requires length-matched, impedance-controlled traces and careful fly-by or daisy-chain topology, and controller training must match the Samsung die's datasheet timing parameters.
This page synthesizes verified distributor data, same-family alternative MPNs, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für K3K8K80BM-JGCT – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K3K8K80BM-JGCT (gleiche Bauform und Footprint) – abweichend in Package, Interface, Memory Type, Density, Organization.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K3LK8K80CM-MFCP
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL8L80CM-MGCT
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3LK8L80CM-MGCT
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL5L50QM-JGCT
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$64 / Stück
Datenblatt ansehen →K3KL2L20DM-JGCT
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$20.8 / Stück
Datenblatt ansehen →K3LK4K40CM-BGCP
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$37.8 / Stück
Datenblatt ansehen →K3K8K80BM-JGCT Grenzwerte & elektrische Eigenschaften
| Manufacturer | Samsung Electronics |
| Product Family | K3K mobile DRAM (LPDDR) component series |
| Speichertyp | Low Power DRAM (LPDDR) component |
| Package Type | FBGA (Ball Grid Array) |
| Montageart | Surface Mount |
| Speed Grade Suffix | J (per Samsung speed-grade coding) |
| Packing Suffix | CT (per Samsung packing-code convention) |
K3K8K80BM-JGCT fbga (ball grid array) Pinbelegungsleitfaden
Pinbelegung für K3K8K80BM-JGCT (fbga (ball grid array)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K3K8K80BM-JGCT.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K3K8K80BM-JGCT ist geeignet für 6 Anwendungs: Smartphone Main Memory, Tablet and Notebook SoC Memory, Automotive Infotainment Memory, Edge AI and Embedded Computing, Networking and Communication Equipment, Test and Measurement Instrumentation.
Smartphone Main Memory
Samsung K3K-series LPDRAM components are purpose-built for smartphone application-processor main memory, where bandwidth per milliwatt determines both UI responsiveness and battery life. The FBGA package footprint matches the PoP and discrete mounting flows used beneath or beside Snapdragon and Exynos SoCs, and the low-voltage I/O interface reduces VDDQ power at multi-gigabit data rates. Placed on length-matched CA and DQ fly-by routing with on-die termination, the device achieves rated bandwidth while deep power-down and self-refresh states cut standby draw to microamp-scale levels during screen-off intervals.
Empfohlen
Tablet and Notebook SoC Memory
In tablets and thin-and-light notebooks, K3K8K80BM-JGCT-class Samsung mobile DRAM provides main-memory capacity in a footprint far smaller than DDR SO-DIMM solutions. The low core and I/O voltages reduce thermal budget pressure in fanless enclosures, while multi-gigabit-per-pin data rates sustain 4K video editing and multitasking workloads. Designers typically mount two to four components in a daisy-chain or fly-by topology around the SoC; controller training compensates trace skew, and the shared JEDEC LPDDR initialization sequence lets the same platform scale capacity by populating additional BGA sites.
Empfohlen
Automotive Infotainment Memory
Automotive cockpit and infotainment SoCs require high-bandwidth memory qualified for extended temperature operation, and Samsung mobile DRAM in FBGA packages serves this segment in discrete memory-down configurations. The component supplies the frame buffers and map data pools demanded by multi-display clusters, with the low-voltage interface easing power-tree design on 12V automotive rails downstream of buck converters. Designers must derate speed grades across the AEC-relevant temperature envelope and validate controller training at cold crank voltage minima, typically reserving the highest Samsung speed grades for 0-85C or tighter ranges.
Empfohlen
Edge AI and Embedded Computing
Edge-AI modules and embedded vision platforms use LPDRAM components like K3K8K80BM-JGCT to feed NPUs and ISP pipelines where bandwidth per watt constrains inference throughput. The BGA memory-down format integrates directly onto SoM and camera-module PCBs, and the high pin-bandwidth sustains CNN feature-map traffic that would saturate LPDDR4-class or slower interfaces. Shared-memory architecture lets the same device serve the ISP frame buffer and the NPU weight cache, eliminating discrete SRAM; power modes allow aggressive clock gating between inference frames in always-on sensing applications.
Empfohlen
Networking and Communication Equipment
Small-cell base stations, enterprise Wi-Fi access points, and CPE gateways deploy mobile DRAM components for packet buffering and control-plane memory where board space and power budgets preclude full-size DDR DIMMs. The Samsung BGA component provides the burst bandwidth needed for line-rate packet reordering and QoS queues, while self-refresh modes maintain state during low-traffic duty cycling in battery-backup scenarios. Thermal design matters: sustained buffer traffic keeps DRAM I/O active, so designers verify junction temperature at worst-case throughput rather than average load, usually with 2oz copper pours under the package.
Empfohlen
Test and Measurement Instrumentation
Portable oscilloscopes, logic analyzers, and signal generators use LPDRAM components as deep acquisition memory, where the K3K8K80BM-JGCT-class device records high-speed sample streams ahead of processor analysis. Multi-gigabit-per-pin data rates match the output of high-speed ADC front ends, and the BGA footprint permits dense stacking of multiple devices to extend record length in compact handheld instruments. Designers partition memory across ranks to interleave capture channels and rely on the Samsung die's deterministic latency for time-correlated multi-channel acquisitions in battery-powered field instrumentation.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K3K8K80BM-JGCT – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K3LK8K80CM-MFCP | K3KL8L80CM-MGCT | K3KL5L50QM-JGCT | K3KL2L20DM-JGCT |
|---|---|---|---|---|---|
| Package | FBGA (mobile DRAM BGA) | FBGA - same format | FBGA - same format | FBGA - same format | FBGA - same format |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Series / Die Generation | K3K series | K3LK series | K3KL8 series | K3KL5 series | K3KL2 series |
| Speed Grade Suffix | J | M / F coding | M / G coding | J (same suffix) | J (same suffix) |
| Memory Interface Class | LPDDR (Samsung mobile DRAM) | LPDDR (Samsung mobile DRAM) | LPDDR (Samsung mobile DRAM) | LPDDR (Samsung mobile DRAM) | LPDDR (Samsung mobile DRAM) |
| Distributor Stock Visibility | Quote-based (2026-09-04) | Listed on XAIPART | 4740 pcs (Wolfchip, Sep 02, 2026) | Listed on XAIPART | Listed on XAIPART |
| Verified Cross-Brand Drop-In | None found | N/A (same brand) | N/A (same brand) | N/A (same brand) | N/A (same brand) |
Wichtigste Unterscheidungsmerkmale
- K3K-series die generation retained for legacy board maintenance (vs. K3KL8L80CM-MGCT)
- Shared JGCT speed/packing suffix with newer family parts (vs. K3KL5L50QM-JGCT)
- No cross-brand drop-in exists - Samsung-only interchangeability (vs. K3LK8K80CM-MFCP)
Designhinweise
LPDRAM CA and DQ routing demands impedance-controlled (typically 40-50 ohm single-ended for DQ) traces with per-byte length matching. Follow the fly-by or daisy-chain topology your SoC memory controller specifies and keep stubs below 2 mm on data lanes. Run SI simulation on the full channel including the Samsung package model before tape-out; package RLC for fine-pitch BGA memory contributes measurable ISI at multi-gbps rates. Samsung and SoC vendors publish reference layouts - reuse them rather than free-routing the bus.
Design separate VDD, VDDQ, and VDD2 rails per the Samsung datasheet power table (exact values are NDA-gated for this MPN; mark them [DATA_NEEDED] until verified). Never share VDDQ between DRAM and other loads - I/O switching noise corrupts eye margins. Estimated: a two-rank LPDDR subsystem drawing 800 mA peak on VDDQ at 0.5 V dissipates roughly 0.4 W in the memory domain alone, so size the PMIC buck converter with at least 50% headroom for training and refresh bursts.
Do not assume part-number similarity equals pin compatibility within Samsung mobile DRAM: series codes (K3K vs K3LK vs K3KL8) encode die generations whose ball maps and boot-training sequences differ. Substituting without the package ball-map document will produce a non-booting board. Additionally, controller firmware must carry per-MPN training parameters; a swap between speed-grade suffixes (e.g., J versus M/F codes) requires re-validating read/write eye margins at maximum frequency across the full temperature range.
Place the DRAM within 30 mm of the SoC to keep fly-by skew within the controller training window. Provide a solid, unbroken reference plane under the entire CA/DQ bus - voids under BGA fanout cause impedance discontinuities that show up as marginal eyes at temperature extremes. Add at least one 0.1 uF ceramic decoupling capacitor per supply ball group, placed within 1.5 mm of the package edge, plus bulk 10 uF per rail.
Compliance-Informationen
Compliance declarations for Samsung mobile DRAM are published per date code on the Samsung semiconductor compliance portal; values could not be confirmed from the retrieved web data and must be verified against Samsung's official RoHS/REACH certificate for this MPN.
