K4A4G045WD-BCRC vs K4A4G085WD-BCRC Vergleich
Detaillierter Direktvergleich von K4A4G045WD-BCRC von Samsung Electronics und K4A4G085WD-BCRC von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A4G045WD-BCRC | K4A4G085WD-BCRC |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,45 | $3,58 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gb | — |
| Speicherorganisation | 1G x4 | 512M x 8 |
| Die Generation | D-die | — |
| Supply Voltage VDD | 1.2 V | — |
| Speed Grade / Data Rate | BCRC (2400 Mbps per Samsung product selection guide) | — |
| Gehäuse | TFBGA-78 (FBGA-78) | FBGA-78 (TFBGA) |
| Number of Terminals | 78 | 78 |
| Self Refresh | Yes | — |
| Montageart | Surface Mount | Surface Mount |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Clock Frequency | [DATA_NEEDED: CK frequency for BCRC bin] | — |
| CAS-Latenz | [DATA_NEEDED: CL for BCRC bin] | [DATA_NEEDED: CAS Latency] |
| Bank Architecture | DDR4 8 internal banks with bank groups | — |
| Refresh | Self refresh supported (per Partstack listing) | [DATA_NEEDED: Refresh specification] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Lead Free Status | [DATA_NEEDED: lead-free status] | — |
| Packaging Option | [DATA_NEEDED: tape and reel quantity] | — |
| Memory Density | — | 4 Gbit |
| Datenrate | — | 2400 Mb/s (PC2400) |
| Versorgungsspannung | — | 1.2 V |
| Schnittstelle | — | Parallel |
| Access Mode | — | Multi-bank page burst |
| Betriebstemperaturbereich | — | [DATA_NEEDED: Operating Temperature Range] |
| MSL-Level | — | [DATA_NEEDED: MSL Level] |