K4A4G045WD-BCRC vs K4A4G085WD-BCRC 对比
详细并排对比 K4A4G045WD-BCRC 出自 Samsung Electronics 和 K4A4G085WD-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G045WD-BCRC | K4A4G085WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.45 | $3.58 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gb | — |
| 存储组织 | 1G x4 | 512M x 8 |
| Die Generation | D-die | — |
| Supply Voltage VDD | 1.2 V | — |
| Speed Grade / Data Rate | BCRC (2400 Mbps per Samsung product selection guide) | — |
| 封装 | TFBGA-78 (FBGA-78) | FBGA-78 (TFBGA) |
| Number of Terminals | 78 | 78 |
| Self Refresh | Yes | — |
| 安装类型 | Surface Mount | Surface Mount |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Clock Frequency | [DATA_NEEDED: CK frequency for BCRC bin] | — |
| CAS 延迟 | [DATA_NEEDED: CL for BCRC bin] | [DATA_NEEDED: CAS Latency] |
| Bank Architecture | DDR4 8 internal banks with bank groups | — |
| Refresh | Self refresh supported (per Partstack listing) | [DATA_NEEDED: Refresh specification] |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Lead Free Status | [DATA_NEEDED: lead-free status] | — |
| Packaging Option | [DATA_NEEDED: tape and reel quantity] | — |
| Memory Density | — | 4 Gbit |
| 数据速率 | — | 2400 Mb/s (PC2400) |
| 电源电压 | — | 1.2 V |
| 接口 | — | Parallel |
| Access Mode | — | Multi-bank page burst |
| 工作温度范围 | — | [DATA_NEEDED: Operating Temperature Range] |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |