K4A8G085WB-BCWE vs H5AN8G8NCJR-UHC Vergleich
Detaillierter Direktvergleich von K4A8G085WB-BCWE von Samsung Electronics und H5AN8G8NCJR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A8G085WB-BCWE | H5AN8G8NCJR-UHC |
|---|---|---|
| Marke | Samsung Electronics | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $12,30 | $2,88 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Datenrate | 3200 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Betriebstemperatur | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 78-ball FBGA | FBGA-78 |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Die Classification | B-die | — |
| Schnittstelle | DDR4 (SSTL12) | — |
| Application Domain | Server, industrial control, networking, embedded systems | — |
| VREF AC-Noise Derating | +/-1% of VDD included in timing deratings | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance statement] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Body Size | [DATA_NEEDED: package dimensions in mm] | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| RoHS Code | — | Yes |
| REACH Compliance | — | Yes (per distributor record) |
| Lead-Free | — | Yes (family documented as Lead-Free & Halogen-Free) |
| Halogenfrei | — | Yes |
| Part Life Cycle Code | — | Active |
| Access Type | — | Synchronous, both clock edges (DDR) |
| Memory Configuration | — | Bank-group architecture DDR4 |
| Die Revision | — | CJR (C-die family) |
| Manufacturer | — | SK hynix Inc. |