K4A8G085WB-BCWE vs H5AN8G8NCJR-UHC Comparación
Comparación detallada lado a lado de K4A8G085WB-BCWE por Samsung Electronics y H5AN8G8NCJR-UHC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | K4A8G085WB-BCWE | H5AN8G8NCJR-UHC |
|---|---|---|
| Marca | Samsung Electronics | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $12,30 | $2,88 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organización de memoria | 1G x 8 | 1G x 8 |
| Velocidad de datos | 3200 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Temperatura de funcionamiento | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Encapsulado | 78-ball FBGA | FBGA-78 |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Die Classification | B-die | — |
| Interfaz | DDR4 (SSTL12) | — |
| Application Domain | Server, industrial control, networking, embedded systems | — |
| VREF AC-Noise Derating | +/-1% of VDD included in timing deratings | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Body Size | [DATA_NEEDED: package dimensions in mm] | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| RoHS Code | — | Yes |
| REACH Compliance | — | Yes (per distributor record) |
| Lead-Free | — | Yes (family documented as Lead-Free & Halogen-Free) |
| Sin halógenos | — | Yes |
| Part Life Cycle Code | — | Active |
| Access Type | — | Synchronous, both clock edges (DDR) |
| Memory Configuration | — | Bank-group architecture DDR4 |
| Die Revision | — | CJR (C-die family) |
| Manufacturer | — | SK hynix Inc. |