K4A8G085WC-BCWE vs H5AN4G8NBJR-UHI Vergleich
Detaillierter Direktvergleich von K4A8G085WC-BCWE von Samsung Electronics und H5AN4G8NBJR-UHI von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A8G085WC-BCWE | H5AN4G8NBJR-UHI |
|---|---|---|
| Marke | Samsung Electronics | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7,38 | $2,25 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 4 Gbit |
| Speicherorganisation | 1G x 8 | 512M x 8 |
| Datenrate | 3200 Mbps (DDR4-3200) | 2400 MT/s |
| Versorgungsspannung | 1.2 V | — |
| Betriebstemperatur | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 78FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | DDR4 (parallel, double data rate) | JEDEC DDR4 SDRAM |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS-Status | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Refresh | Standard DDR4 refresh mechanisms | Self-refresh and auto-refresh support |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Supply Voltage (VDD) | — | 1.2 V |
| Grade | — | Industrial (-UHI suffix) |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |