K4A8G085WC-BCWE vs H5AN4G8NBJR-UHI 对比
详细并排对比 K4A8G085WC-BCWE 出自 Samsung Electronics 和 H5AN4G8NBJR-UHI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WC-BCWE | H5AN4G8NBJR-UHI |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.38 | $2.25 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 4 Gbit |
| 存储组织 | 1G x 8 | 512M x 8 |
| 数据速率 | 3200 Mbps (DDR4-3200) | 2400 MT/s |
| 电源电压 | 1.2 V | — |
| 工作温度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封装 | 78FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | DDR4 (parallel, double data rate) | JEDEC DDR4 SDRAM |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS 状态 | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Refresh | Standard DDR4 refresh mechanisms | Self-refresh and auto-refresh support |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Supply Voltage (VDD) | — | 1.2 V |
| Grade | — | Industrial (-UHI suffix) |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |