K4A8G085WC-BCWE vs H5AN4G8NBJR-UHI Comparison
Detailed side-by-side comparison of K4A8G085WC-BCWE by Samsung Electronics and H5AN4G8NBJR-UHI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BCWE | H5AN4G8NBJR-UHI |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.38 | $2.25 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 4 Gbit |
| Organization | 1G x 8 | 512M x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | 2400 MT/s |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Package | 78FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (parallel, double data rate) | JEDEC DDR4 SDRAM |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS Status | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Refresh | Standard DDR4 refresh mechanisms | Self-refresh and auto-refresh support |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Supply Voltage (VDD) | — | 1.2 V |
| Grade | — | Industrial (-UHI suffix) |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| CAS Latency | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |