K9MDG08U5M vs K9QDGB8U7M Vergleich
Detaillierter Direktvergleich von K9MDG08U5M von Samsung Electronics und K9QDGB8U7M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9MDG08U5M | K9QDGB8U7M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Unknown |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $35,50 | $0,00 |
| Speichertyp | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | [DATA_NEEDED: Density] |
| Speicherorganisation | 16G x 8 bit | [DATA_NEEDED: Organization] |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Schnittstelle | Asynchronous x8 multiplexed address/data | — |
| Gehäuse | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | — |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: Page Size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: Block Size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS-Status | unknown | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 NAND Flash |
| Schnittstellentyp | — | [DATA_NEEDED: Interface Type] |
| Versorgungsspannung | — | [DATA_NEEDED: Supply Voltage] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |
| Read Latency | — | [DATA_NEEDED: Read Latency] |
| Package Type | — | BGA (surface mount) |