K9MDG08U5M vs K9QDGB8U7M Сравнение
Подробное сравнение бок о бок K9MDG08U5M от Samsung Electronics и K9QDGB8U7M от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | K9MDG08U5M | K9QDGB8U7M |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | Unknown |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $35,50 | $0,00 |
| Тип памяти | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | [DATA_NEEDED: Density] |
| Организация памяти | 16G x 8 bit | [DATA_NEEDED: Organization] |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Интерфейс | Asynchronous x8 multiplexed address/data | — |
| Корпус | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | — |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: Page Size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: Block Size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Статус RoHS | unknown | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 NAND Flash |
| Тип интерфейса | — | [DATA_NEEDED: Interface Type] |
| Напряжение питания | — | [DATA_NEEDED: Supply Voltage] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |
| Read Latency | — | [DATA_NEEDED: Read Latency] |
| Package Type | — | BGA (surface mount) |