K9MDG08U5M vs K9QDGB8U7M 比較
詳細な並列比較: K9MDG08U5M メーカー: Samsung Electronics および K9QDGB8U7M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9MDG08U5M | K9QDGB8U7M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | Unknown |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $35.50 | $0.00 |
| メモリタイプ | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | [DATA_NEEDED: Density] |
| メモリ構成 | 16G x 8 bit | [DATA_NEEDED: Organization] |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| インターフェース | Asynchronous x8 multiplexed address/data | — |
| パッケージ | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | — |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: Page Size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: Block Size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS ステータス | unknown | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 NAND Flash |
| インターフェースタイプ | — | [DATA_NEEDED: Interface Type] |
| 電源電圧 | — | [DATA_NEEDED: Supply Voltage] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |
| Read Latency | — | [DATA_NEEDED: Read Latency] |
| Package Type | — | BGA (surface mount) |