K9MDG08U5M vs K9QDGB8U7M Comparaison
Comparaison détaillée côte à côte de K9MDG08U5M par Samsung Electronics et K9QDGB8U7M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | K9MDG08U5M | K9QDGB8U7M |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Unknown |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $35,50 | $0,00 |
| Type de mémoire | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | [DATA_NEEDED: Density] |
| Organisation de la mémoire | 16G x 8 bit | [DATA_NEEDED: Organization] |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Interface | Asynchronous x8 multiplexed address/data | — |
| Boîtier | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | — |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: Page Size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: Block Size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Statut RoHS | unknown | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 NAND Flash |
| Type d'interface | — | [DATA_NEEDED: Interface Type] |
| Tension d'alimentation | — | [DATA_NEEDED: Supply Voltage] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |
| Read Latency | — | [DATA_NEEDED: Read Latency] |
| Package Type | — | BGA (surface mount) |