K9MDG08U5M vs K9QDGB8U7M Comparison
Detailed side-by-side comparison of K9MDG08U5M by Samsung Electronics and K9QDGB8U7M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9MDG08U5M | K9QDGB8U7M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Unknown |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.50 | $0.00 |
| Memory Type | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | [DATA_NEEDED: Density] |
| Organization | 16G x 8 bit | [DATA_NEEDED: Organization] |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Interface | Asynchronous x8 multiplexed address/data | — |
| Package | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | — |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: Page Size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: Block Size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS Status | unknown | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K9 NAND Flash |
| Interface Type | — | [DATA_NEEDED: Interface Type] |
| Supply Voltage | — | [DATA_NEEDED: Supply Voltage] |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Endurance] |
| Read Latency | — | [DATA_NEEDED: Read Latency] |
| Package Type | — | BGA (surface mount) |