LPC55S28JBD64E vs LPC5526JBD64E Vergleich
Detaillierter Direktvergleich von LPC55S28JBD64E von NXP Semiconductors und LPC5526JBD64E von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | LPC55S28JBD64E | LPC5526JBD64E |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Microcontrollers | Microcontrollers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,44 | $2,95 |
| Core Processor | Arm Cortex-M33 | ARM Cortex-M33 (r0p3) |
| Core Size | 32-Bit | 32-Bit |
| Maximale Taktfrequenz | 150 MHz | 150 MHz |
| Flash Memory Size | 512 KB (512K x 8) | — |
| SRAM Size | 128 KB | — |
| Series | LPC55S2x | — |
| Gehäuse | 64-HTQFP (10x10 mm) | 64-HTQFP (10x10 mm) |
| Montageart | Surface Mount | Surface Mount |
| Security Features | TrustZone, PUF-based security (S-series) | — |
| Memory Protection Unit | Yes (MPU) | Yes (MPU) |
| Interrupt Controller | NVIC with NMI input (selectable sources) | NVIC (built-in) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Versorgungsspannung | [DATA_NEEDED: supply voltage range] | [DATA_NEEDED: supply voltage range] |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | 3 | 3 |
| Peak Reflow Temperature | 260 C | 260 C |
| Maximum Time at Peak Reflow | 30 s | — |
| Terminal Finish | Tin (JESD-609 code e3) | Tin (JESD-609 code e3) |
| RoHS-Status | Compliant (e3 lead-free finish) | Compliant |
| Process Technology | 40 nm NVM | 40 nm NVM |
| Flash Memory | — | 256KB (256K x 8) |
| RAM Size | — | [DATA_NEEDED: SRAM size] |
| Security Feature | — | ARM TrustZone |
| NMI Input | — | Yes, with selection of sources |
| Max Time At Peak Reflow | — | 30 s |
| Lebenszyklusstatus | — | Active |