M29W160FB70N3E vs M29W160EB80ZA3SE Vergleich

Detaillierter Direktvergleich von M29W160FB70N3E von Micron Technology und M29W160EB80ZA3SE von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ Aktiv
Micron Technology
M29W160EB80ZA3SE M29W160EB80ZA3SE - 16Mb NOR Flash 80ns TFBGA-48 | Micron

M29W160EB80ZA3SE - 16Mb NOR Flash 80ns TFBGA-48 | Micron

M29W160EB80ZA3SE ✓ Aktiv

Spezifikationsvergleich

Parameter M29W160FB70N3E M29W160EB80ZA3SE
Marke Micron Technology Micron Technology
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,58 $1,35
Speichertyp FLASH - NOR NOR Flash (Parallel)
Speichergröße 16 Mbit (2M x8 / 1M x16) 16 Mbit (2M x8 / 1M x16)
Access Time 70 ns 80 ns
Schnittstelle Parallel Parallel (Byte-wide / Word-wide)
Supply Voltage (VCC) 3.0 V to 3.6 V —
Programming Voltage Single supply (no separate VPP required) —
Bus Configuration x8 / x16 selectable (BYTE# pin) —
Architecture Boot block —
Gehäuse / Bauform 48-TFSOP (0.724 in, 18.40 mm width) —
Montageart Surface Mount Surface Mount (BGA)
Packaging Tray Tape & Reel (TR)
Betriebstemperatur [DATA_NEEDED: operating temperature range] -40C to +125C
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: data retention] [DATA_NEEDED: data retention]
Status Output Data polling / toggle bit —
Block Protection Yes (boot block protection) —
Versorgungsspannung — 2.7 V to 3.6 V
Speicherorganisation — 16 Mbit Boot Block, x8/x16 selectable
Gehäuse — 48-TFBGA (6x8 mm, 0.8 mm ball pitch)
Qualification — AEC-Q100 (automotive grade per datasheets.com listing)
Programming Supply — Single 3V supply for program, erase and read
Technology Family — M29W160EB (3rd generation M29W series)
Erase Block Architecture — Boot block (parameter and main blocks)
Program/Erase Cycles — [DATA_NEEDED: program/erase endurance cycles]
Moisture Sensitivity Level — [DATA_NEEDED: MSL level]
RoHS-Status — Pb-free (SE suffix)

Datenblätter & Ressourcen

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