M29W160FB70N3E vs M29W160EB80ZA3SE Comparación
Comparación detallada lado a lado de M29W160FB70N3E por Micron Technology y M29W160EB80ZA3SE por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
M29W160EB80ZA3SE - 16Mb NOR Flash 80ns TFBGA-48 | Micron
M29W160EB80ZA3SE ✓ ActivoComparación de especificaciones
| Parámetro | M29W160FB70N3E | M29W160EB80ZA3SE |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,58 | $1,35 |
| Tipo de memoria | FLASH - NOR | NOR Flash (Parallel) |
| Tamaño de memoria | 16 Mbit (2M x8 / 1M x16) | 16 Mbit (2M x8 / 1M x16) |
| Access Time | 70 ns | 80 ns |
| Interfaz | Parallel | Parallel (Byte-wide / Word-wide) |
| Supply Voltage (VCC) | 3.0 V to 3.6 V | — |
| Programming Voltage | Single supply (no separate VPP required) | — |
| Bus Configuration | x8 / x16 selectable (BYTE# pin) | — |
| Architecture | Boot block | — |
| Encapsulado / Carcasa | 48-TFSOP (0.724 in, 18.40 mm width) | — |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Packaging | Tray | Tape & Reel (TR) |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Status Output | Data polling / toggle bit | — |
| Block Protection | Yes (boot block protection) | — |
| Tensión de alimentación | — | 2.7 V to 3.6 V |
| Organización de memoria | — | 16 Mbit Boot Block, x8/x16 selectable |
| Encapsulado | — | 48-TFBGA (6x8 mm, 0.8 mm ball pitch) |
| Qualification | — | AEC-Q100 (automotive grade per datasheets.com listing) |
| Programming Supply | — | Single 3V supply for program, erase and read |
| Technology Family | — | M29W160EB (3rd generation M29W series) |
| Erase Block Architecture | — | Boot block (parameter and main blocks) |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |
| Estado RoHS | — | Pb-free (SE suffix) |