M29W640GB70N3F vs M29W128GH70N3F Vergleich
Detaillierter Direktvergleich von M29W640GB70N3F von Micron Technology und M29W128GH70N3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W640GB70N3F | M29W128GH70N3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,66 | $0,00 |
| Speichertyp | NOR Flash, Parallel | NOR Flash |
| Density | 64 Mb (8 MB) | 128 Mbit (16 MB) |
| Speicherorganisation | x8 / x16 | 8M x16 / 16M x8 |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | 2.7 V to 3.6 V | — |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Qualification | Automotive AEC-Q100 | — |
| Gehäuse | 48-TSOP I | 56-TSOP |
| Montageart | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | [DATA_NEEDED: block size/organization] |
| Part Status | Obsolete | — |
| RoHS-Status | Compliant (per JLCPCB listing) | Compliant |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Read Current | [DATA_NEEDED: active read current] | — |
| Schnittstelle | — | Parallel |
| Supply Voltage (VCC) | — | 3 V (2.7 V to 3.6 V) |
| Erase/Program Cycles | — | [DATA_NEEDED: endurance rating] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| CFI Compliant | — | Yes |
| Supply Current - Read | — | [DATA_NEEDED: ICC read] |
| Supply Current - Program/Erase | — | [DATA_NEEDED: ICC write] |
| Programming Voltage | — | Single supply (no separate VPP required) |