M29W640GB70N3F vs M29W128GH70N3F 对比
详细并排对比 M29W640GB70N3F 出自 Micron Technology 和 M29W128GH70N3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W640GB70N3F | M29W128GH70N3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.66 | $0.00 |
| 存储器类型 | NOR Flash, Parallel | NOR Flash |
| Density | 64 Mb (8 MB) | 128 Mbit (16 MB) |
| 存储组织 | x8 / x16 | 8M x16 / 16M x8 |
| Access Time | 70 ns | 70 ns |
| 电源电压 | 2.7 V to 3.6 V | — |
| 工作温度 | -40C to +125C | -40C to +125C |
| Qualification | Automotive AEC-Q100 | — |
| 封装 | 48-TSOP I | 56-TSOP |
| 安装类型 | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | [DATA_NEEDED: block size/organization] |
| Part Status | Obsolete | — |
| RoHS 状态 | Compliant (per JLCPCB listing) | Compliant |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Read Current | [DATA_NEEDED: active read current] | — |
| 接口 | — | Parallel |
| Supply Voltage (VCC) | — | 3 V (2.7 V to 3.6 V) |
| Erase/Program Cycles | — | [DATA_NEEDED: endurance rating] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| CFI Compliant | — | Yes |
| Supply Current - Read | — | [DATA_NEEDED: ICC read] |
| Supply Current - Program/Erase | — | [DATA_NEEDED: ICC write] |
| Programming Voltage | — | Single supply (no separate VPP required) |