M29W640GB70N3F vs M29W128GH70N3F Comparación
Comparación detallada lado a lado de M29W640GB70N3F por Micron Technology y M29W128GH70N3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W640GB70N3F | M29W128GH70N3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,66 | $0,00 |
| Tipo de memoria | NOR Flash, Parallel | NOR Flash |
| Density | 64 Mb (8 MB) | 128 Mbit (16 MB) |
| Organización de memoria | x8 / x16 | 8M x16 / 16M x8 |
| Access Time | 70 ns | 70 ns |
| Tensión de alimentación | 2.7 V to 3.6 V | — |
| Temperatura de funcionamiento | -40C to +125C | -40C to +125C |
| Qualification | Automotive AEC-Q100 | — |
| Encapsulado | 48-TSOP I | 56-TSOP |
| Tipo de montaje | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | [DATA_NEEDED: block size/organization] |
| Part Status | Obsolete | — |
| Estado RoHS | Compliant (per JLCPCB listing) | Compliant |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Read Current | [DATA_NEEDED: active read current] | — |
| Interfaz | — | Parallel |
| Supply Voltage (VCC) | — | 3 V (2.7 V to 3.6 V) |
| Erase/Program Cycles | — | [DATA_NEEDED: endurance rating] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| CFI Compliant | — | Yes |
| Supply Current - Read | — | [DATA_NEEDED: ICC read] |
| Supply Current - Program/Erase | — | [DATA_NEEDED: ICC write] |
| Programming Voltage | — | Single supply (no separate VPP required) |