M29W640GB70N3F vs M29W128GH70N3F Comparaison
Comparaison détaillée côte à côte de M29W640GB70N3F par Micron Technology et M29W128GH70N3F par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | M29W640GB70N3F | M29W128GH70N3F |
|---|---|---|
| Marque | Micron Technology | Micron Technology |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,66 | $0,00 |
| Type de mémoire | NOR Flash, Parallel | NOR Flash |
| Density | 64 Mb (8 MB) | 128 Mbit (16 MB) |
| Organisation de la mémoire | x8 / x16 | 8M x16 / 16M x8 |
| Access Time | 70 ns | 70 ns |
| Tension d'alimentation | 2.7 V to 3.6 V | — |
| Température de fonctionnement | -40C to +125C | -40C to +125C |
| Qualification | Automotive AEC-Q100 | — |
| Boîtier | 48-TSOP I | 56-TSOP |
| Type de montage | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | [DATA_NEEDED: block size/organization] |
| Part Status | Obsolete | — |
| Statut RoHS | Compliant (per JLCPCB listing) | Compliant |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Read Current | [DATA_NEEDED: active read current] | — |
| Interface | — | Parallel |
| Supply Voltage (VCC) | — | 3 V (2.7 V to 3.6 V) |
| Erase/Program Cycles | — | [DATA_NEEDED: endurance rating] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| CFI Compliant | — | Yes |
| Supply Current - Read | — | [DATA_NEEDED: ICC read] |
| Supply Current - Program/Erase | — | [DATA_NEEDED: ICC write] |
| Programming Voltage | — | Single supply (no separate VPP required) |