M58BW32FB5ZA3T vs M58BW16FB4ZA3F Vergleich
Detaillierter Direktvergleich von M58BW32FB5ZA3T von Micron Technology und M58BW16FB4ZA3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M58BW32FB5ZA3T | M58BW16FB4ZA3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,88 | $3,48 |
| Speichertyp | FLASH - NOR Memory IC | NOR Flash, parallel burst |
| Speichergröße | 32 Mbit | 16 Mbit (1M x16 / 512K x32) |
| Speicherorganisation | x32 (Boot Block, Burst) | 1M words x16, boot block |
| Schnittstelle | Parallel | Parallel, synchronous burst |
| Access Time | 55 ns | 45 ns |
| Versorgungsspannung | 3.3 V (single supply) | 3.3 V nominal |
| Burst Mode | Yes (synchronous burst read) | — |
| Block Architecture | Boot Block | — |
| Gehäuse | 80-LBGA (10 x 12 mm) | 80-LBGA (10 x 12 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +125C (automotive grade) |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Active Read Current | [DATA_NEEDED: active current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Packaging | Tape & Reel (TR suffix) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (3F lead-free suffix) |
| Number of Terminals | — | 80 |
| Application Grade | — | Automotive |
| Technology | — | Boot Block NOR Flash |
| Read Mode | — | Asynchronous and synchronous burst read |
| Lifecycle | — | Active / legacy parallel NOR |