M58BW32FB5ZA3T vs M58BW16FB4ZA3F 对比
详细并排对比 M58BW32FB5ZA3T 出自 Micron Technology 和 M58BW16FB4ZA3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M58BW32FB5ZA3T | M58BW16FB4ZA3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.88 | $3.48 |
| 存储器类型 | FLASH - NOR Memory IC | NOR Flash, parallel burst |
| 存储容量 | 32 Mbit | 16 Mbit (1M x16 / 512K x32) |
| 存储组织 | x32 (Boot Block, Burst) | 1M words x16, boot block |
| 接口 | Parallel | Parallel, synchronous burst |
| Access Time | 55 ns | 45 ns |
| 电源电压 | 3.3 V (single supply) | 3.3 V nominal |
| Burst Mode | Yes (synchronous burst read) | — |
| Block Architecture | Boot Block | — |
| 封装 | 80-LBGA (10 x 12 mm) | 80-LBGA (10 x 12 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +125C (automotive grade) |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Active Read Current | [DATA_NEEDED: active current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Packaging | Tape & Reel (TR suffix) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant (3F lead-free suffix) |
| Number of Terminals | — | 80 |
| Application Grade | — | Automotive |
| Technology | — | Boot Block NOR Flash |
| Read Mode | — | Asynchronous and synchronous burst read |
| Lifecycle | — | Active / legacy parallel NOR |