M58BW32FB5ZA3T vs M58BW16FB4ZA3F Comparación
Comparación detallada lado a lado de M58BW32FB5ZA3T por Micron Technology y M58BW16FB4ZA3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M58BW32FB5ZA3T | M58BW16FB4ZA3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,88 | $3,48 |
| Tipo de memoria | FLASH - NOR Memory IC | NOR Flash, parallel burst |
| Tamaño de memoria | 32 Mbit | 16 Mbit (1M x16 / 512K x32) |
| Organización de memoria | x32 (Boot Block, Burst) | 1M words x16, boot block |
| Interfaz | Parallel | Parallel, synchronous burst |
| Access Time | 55 ns | 45 ns |
| Tensión de alimentación | 3.3 V (single supply) | 3.3 V nominal |
| Burst Mode | Yes (synchronous burst read) | — |
| Block Architecture | Boot Block | — |
| Encapsulado | 80-LBGA (10 x 12 mm) | 80-LBGA (10 x 12 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -40C to +125C (automotive grade) |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Active Read Current | [DATA_NEEDED: active current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant (3F lead-free suffix) |
| Number of Terminals | — | 80 |
| Application Grade | — | Automotive |
| Technology | — | Boot Block NOR Flash |
| Read Mode | — | Asynchronous and synchronous burst read |
| Lifecycle | — | Active / legacy parallel NOR |