MPX2050D vs MPX2100D Vergleich
Detaillierter Direktvergleich von MPX2050D von STMicroelectronics und MPX2100D von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics
MPX2050D ✓ AktivSpezifikationsvergleich
| Parameter | MPX2050D | MPX2100D |
|---|---|---|
| Marke | STMicroelectronics | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,40 | $17,80 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Ausgangstyp | Analog voltage (Wheatstone bridge, differential) | Analog ratiometric Wheatstone bridge (millivolts) |
| Output Voltage Span | 0 mV to 40 mV (at 10 V excitation, 50 kPa) | — |
| Sensitivity (typical) | 0.45 mV/kPa (at 10 V excitation) | — |
| Excitation Voltage | 10 V DC (typical), [DATA_NEEDED: max Vex] | — |
| Linearity | ±0.5% (typical, full scale) | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Accuracy | ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) | — |
| Betriebstemperatur | -40°C to +125°C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Response Time | 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) | — |
| Bridge Resistance | 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) | — |
| Gehäuse | 4-SIP Module (Unibody, ported) | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Port Configuration | Dual inlet (differential) | — |
| Montageart | Through-hole SIP | Through-hole SIP module |
| RoHS-Status | Compliant (per ST product page) | Compliant [DATA_NEEDED: confirm from NXP product page] |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Betriebstemperaturbereich | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |