MPX2050D vs MPX2100D Comparación

Comparación detallada lado a lado de MPX2050D por STMicroelectronics y MPX2100D por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MPX2100D MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D ✓ Activo

Comparación de especificaciones

Parámetro MPX2050D MPX2100D
Marca STMicroelectronics NXP Semiconductors
Categoría Pressure Sensors Pressure Sensors
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $5,40 $17,80
Pressure Type Differential Differential
Operating Pressure Range 0 kPa to 50 kPa (0 PSI to 7.25 PSI) 0 kPa to 100 kPa (0 to 14.5 psi)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] —
Tipo de salida Analog voltage (Wheatstone bridge, differential) Analog ratiometric Wheatstone bridge (millivolts)
Output Voltage Span 0 mV to 40 mV (at 10 V excitation, 50 kPa) —
Sensitivity (typical) 0.45 mV/kPa (at 10 V excitation) —
Excitation Voltage 10 V DC (typical), [DATA_NEEDED: max Vex] —
Linearity ±0.5% (typical, full scale) 0.1% to 0.3% typical [DATA_NEEDED: confirm]
Accuracy ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) —
Temperatura de funcionamiento -40°C to +125°C —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Response Time 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) —
Bridge Resistance 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) —
Encapsulado 4-SIP Module (Unibody, ported) 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch
Port Configuration Dual inlet (differential) —
Tipo de montaje Through-hole SIP Through-hole SIP module
Estado RoHS Compliant (per ST product page) Compliant [DATA_NEEDED: confirm from NXP product page]
Nivel MSL [DATA_NEEDED: MSL rating] —
Full-Scale Span (Typical) — 40 mV at 10 V excitation
Sensitivity (Nominal) — 0.4 mV/kPa
Supply Voltage (Recommended) — 10 V DC
Supply Voltage (Maximum) — 16 V DC
Pressure Port Configuration — Dual axial ports (differential)
Package Body Dimensions — 15.56 mm x 15.56 mm x 5.33 mm
Rango de temperatura de funcionamiento — -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
On-Chip Temperature Compensation — Yes (factory laser-trimmed)
Technology — Silicon piezoresistive MEMS strain-gauge bridge
Diaphragm Material — Silicon [DATA_NEEDED: confirm]

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