MPX2050D vs MPX2100D Сравнение
Подробное сравнение бок о бок MPX2050D от STMicroelectronics и MPX2100D от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
STMicroelectronics
MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics
MPX2050D ✓ АктивенСравнение характеристик
| Параметр | MPX2050D | MPX2100D |
|---|---|---|
| Бренд | STMicroelectronics | NXP Semiconductors |
| Категория | Pressure Sensors | Pressure Sensors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $5,40 | $17,80 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Тип выхода | Analog voltage (Wheatstone bridge, differential) | Analog ratiometric Wheatstone bridge (millivolts) |
| Output Voltage Span | 0 mV to 40 mV (at 10 V excitation, 50 kPa) | — |
| Sensitivity (typical) | 0.45 mV/kPa (at 10 V excitation) | — |
| Excitation Voltage | 10 V DC (typical), [DATA_NEEDED: max Vex] | — |
| Linearity | ±0.5% (typical, full scale) | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Accuracy | ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) | — |
| Рабочая температура | -40°C to +125°C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Response Time | 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) | — |
| Bridge Resistance | 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) | — |
| Корпус | 4-SIP Module (Unibody, ported) | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Port Configuration | Dual inlet (differential) | — |
| Тип монтажа | Through-hole SIP | Through-hole SIP module |
| Статус RoHS | Compliant (per ST product page) | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Диапазон рабочих температур | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |