MPX2050D vs MPX2100D Comparaison
Comparaison détaillée côte à côte de MPX2050D par STMicroelectronics et MPX2100D par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics
MPX2050D ✓ ActifComparaison des spécifications
| Paramètre | MPX2050D | MPX2100D |
|---|---|---|
| Marque | STMicroelectronics | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,40 | $17,80 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Type de sortie | Analog voltage (Wheatstone bridge, differential) | Analog ratiometric Wheatstone bridge (millivolts) |
| Output Voltage Span | 0 mV to 40 mV (at 10 V excitation, 50 kPa) | — |
| Sensitivity (typical) | 0.45 mV/kPa (at 10 V excitation) | — |
| Excitation Voltage | 10 V DC (typical), [DATA_NEEDED: max Vex] | — |
| Linearity | ±0.5% (typical, full scale) | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Accuracy | ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) | — |
| Température de fonctionnement | -40°C to +125°C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Response Time | 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) | — |
| Bridge Resistance | 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) | — |
| Boîtier | 4-SIP Module (Unibody, ported) | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Port Configuration | Dual inlet (differential) | — |
| Type de montage | Through-hole SIP | Through-hole SIP module |
| Statut RoHS | Compliant (per ST product page) | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Plage de température de fonctionnement | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |