MPX5010GS vs MPX5010DP Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MPX5010GS disebabkan oleh NXP Semiconductors dan MPX5010DP disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MPX5010GS MPX5010GS - 10kPa Gauge Pressure Sensor, 5V, 6-SIP | NXP

MPX5010GS - 10kPa Gauge Pressure Sensor, 5V, 6-SIP | NXP

MPX5010GS ✓ Aktif
NXP Semiconductors
MPX5010DP MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP ✓ Aktif

Pengandingan Spesifikasi

Parametr MPX5010GS MPX5010DP
Merek NXP Semiconductors NXP Semiconductors
Kategori Pressure Sensors Pressure Sensors
Status Lingkungan Hidup Aktif Aktif
Pressure Type Vented Gauge Differential
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 to 1.45 PSI)
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
Tegangan Pemberi Arus Operasi 4.75 V to 5.25 V (5 V typical) —
Arus Pemberi Arus 5 mA typical [DATA_NEEDED: supply current mA]
Gambaran Tegangan Output 0.2 V to 4.7 V at 5 V supply 0.2 V to 4.7 V
Accuracy +/-2.5% of full-scale span —
Response Time 1.0 ms typical —
Suhu Operasi 0 C to +85 C (compensated) 0 C to +85 C (compensated)
Storage Temperature -40 C to +125 C [DATA_NEEDED: storage temperature C]
Jenis Output Analog, ratiometric Analog, ratiometric
Port Type Male 0.19" (4.93 mm) tube, axial —
Kemasan 6-SIP Module, Case 867E-03 6-SIP Module
Sensing Technology Piezoresistive (silicon strain gauge) —
Jenis Pemasangan Through-hole, axial tube Through-hole (SIP)
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Maximum Overload Pressure — [DATA_NEEDED: max overload kPa]
Sensitivity — 450 mV/kPa (typical)
Tegangan Pemberi Arus — 4.75 V to 5.25 V (5 V typical)
Linearity — ±1.5% VFSS (typical, 0-85 C)
Port Configuration — Dual axial ports, 4.93 mm (0.19 in) tube
Technology — Piezoresistive, monolithic silicon, on-chip signal conditioned

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