MRF8S9170NR3 vs MRF377HR3 Vergleich
Detaillierter Direktvergleich von MRF8S9170NR3 von NXP Semiconductors und MRF377HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF8S9170NR3 | MRF377HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Manufacturer | NXP Semiconductors | — |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power LDMOS | Lateral RF Power MOSFET (Silicon) |
| Frequency Range | 920 MHz to 960 MHz | 470 MHz to 860 MHz |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| Gehäuse | OM-780-2 (ceramic flange) | NI-860C3 (ceramic flange) |
| Montageart | Surface Mount / Flange Mount (bolt-down thermal pad) | Flange / Screw Mount (Surface Mount variant per HR3 suffix) |
| Betriebstemperatur | [DATA_NEEDED: Tj max and operating range from datasheet] | -40 C to +200 C (junction) |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | Lead Free / RoHS Compliant |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Drain-Source Voltage (V DSS) | — | 65 V (max) |
| Operating Drain Voltage | — | 32 V (typical) |
| Continuous Output Power (P out) | — | 45 W (CW, push-pull) |
| Power Gain (G ps) | — | 18.2 dB (typical at 860 MHz) |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| Test Current | — | 2 A |
| Configuration | — | Push-Pull (internally matched) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Case Connection | — | Source |
| Maximum Power Dissipation | — | 648 W (per Partstack listing) |