MRF8S9170NR3 vs MRF377HR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8S9170NR3 disebabkan oleh NXP Semiconductors dan MRF377HR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRF8S9170NR3 | MRF377HR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | — |
| Jenis Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power LDMOS | Lateral RF Power MOSFET (Silicon) |
| Frequency Range | 920 MHz to 960 MHz | 470 MHz to 860 MHz |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| Kemasan | OM-780-2 (ceramic flange) | NI-860C3 (ceramic flange) |
| Jenis Pemasangan | Surface Mount / Flange Mount (bolt-down thermal pad) | Flange / Screw Mount (Surface Mount variant per HR3 suffix) |
| Suhu Operasi | [DATA_NEEDED: Tj max and operating range from datasheet] | -40 C to +200 C (junction) |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | Lead Free / RoHS Compliant |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Drain-Source Voltage (V DSS) | — | 65 V (max) |
| Operating Drain Voltage | — | 32 V (typical) |
| Continuous Output Power (P out) | — | 45 W (CW, push-pull) |
| Power Gain (G ps) | — | 18.2 dB (typical at 860 MHz) |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| Test Current | — | 2 A |
| Configuration | — | Push-Pull (internally matched) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Case Connection | — | Source |
| Maximum Power Dissipation | — | 648 W (per Partstack listing) |